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      Hot Sale 18A 650V N-Channel Power MOSFET Transistor China Chip TO-220F Package For Metal Halide Lamp Ballasts

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      Aiko Electronics Technology Co., Ltd.1 yrCN
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      Key attributes

      Industry-specific attributes

      Model Number
      AKF18N65P
      Type
      MOSFET 
      Brand Name
      AIKO
      Package Type
      TO-220F

      Other attributes

      Mounting Type
      through holes
      Description
      Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested
      Place of Origin
      Zhejiang, China
      Package / Case
      TO-220F
      Type
      MOSFET transistor
      Operating Temperature
      -55℃~+150℃
      Series
      MOSFET
      Application
      high efficient DC to DC converters
      Supplier Type
      Original manufacturer, ODM
      Media Available
      datasheet, Photo
      Brand
      AKF18N65P 650V 18A N-Channel Power MOSFET
      Current - Collector (Ic) (Max)
      18A(TC=25℃), 11.5A(TC=100℃)
      Voltage - Collector Emitter Breakdown (Max)
      650V
      Vce Saturation (Max) @ Ib, Ic
      30V
      Current - Collector Cutoff (Max)
      18A
      Power - Max
      60W
      Operating Temperature
      -55°C ~ 150°C
      Mounting Type
      Through Hole
      Drain to Source Voltage (Vdss)
      650V
      Current - Continuous Drain (Id) @ 25°C
      18A
      Rds On (Max) @ Id, Vgs
      0.52 Ohm
      Vgs(th) (Max) @ Id
      4V
      Gate Charge (Qg) (Max) @ Vgs
      63nC
      Input Capacitance (Ciss) (Max) @ Vds
      2450pF @ 25V
      Current Rating (Amps)
      18A
      Voltage - Rated
      650V
      Drive Voltage (Max Rds On, Min Rds On)
      2.0V
      Vgs (Max)
      4.0V
      Configuration
      Single
      Vce(on) (Max) @ Vge, Ic
      10V
      Input Capacitance (Cies) @ Vce
      2450pF
      Voltage - Breakdown (V(BR)GSS)
      650V
      Current - Drain (Idss) @ Vds (Vgs=0)
      10-100uA
      Current Drain (Id) - Max
      18A
      Voltage - Cutoff (VGS off) @ Id
      30V
      Resistance - RDS(On)
      0.52 Ohm(Max.)
      Voltage - Output
      650V
      Voltage - Offset (Vt)
      ±30V
      Current - Valley (Iv)
      11.5A
      Current - Peak
      18A
      Applications
      fast switching
      Transistor Type
      MOSFET transistor, N-Channel, Enhancement Mode
      VDSS
      650V
      VGSS
      ±30V
      Drain Current(TC=25℃)
      18A
      Drain Current(TC=100℃)
      11.5A
      Single Pulse Avalanche Energy
      920mJ
      Maximum Power Dissipation(TC=25℃)
      60W
      Gate-body leakage Current, Forward
      100nA
      Gate Threshold Voltage
      2-4V
      Application 1
      UPS Applications
      Application 2
      DC-DC Converters and AC-DC Power Supply
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      Lead time

      Quantity (pieces)1 - 5000050001 - 100000000 > 100000000
      Lead time (days)2030To be negotiated

      Customization

      Customized logo
      Min. order: 100000
      Customized packaging
      Min. order: 100000
      Graphic customization
      Min. order: 100000
      For more customization details, message supplier

      Product descriptions from the supplier

      50000 - 99999999 pieces
      $0.20
      >= 100000000 pieces
      $0.05

      Variations

      Total options:
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