Mounting Type
Through Holes
Description
Typical Forward Voltage Drop: VF=1.6V@ IF=20A, Reverse Voltage: VRRM=1200V, Avalanche Energy Rated, High Surge Capability, Low Power Loss and High Efficiency, Silicon Carbide Substrate
Place of Origin
Zhejiang, China
Operating Temperature
-55°C~+175°C
Series
SiC Schottky Barrier Diode SBD
Application
Switching Power Supply.
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Max. Reverse Voltage
1200V
Max. Reverse Current
200uA
Diode Type
SiC Schottky Barrier Diode
Voltage - Peak Reverse (Max)
1200V
Current - Average Rectified (Io)
40A
Voltage - Forward (Vf) (Max) @ If
1.6V@IF=20A
Current - Reverse Leakage @ Vr
200uA@VR=1200V
Operating Temperature
-55°C~+175°C
Mounting Type
Through Holes
Diode Configuration
2 diodes
Voltage - DC Reverse (Vr) (Max)
1200V
Current - Average Rectified (Io) (per Diode)
20A
Capacitance @ Vr, F
1350pF@VR=0V, f=1MHz
Power Dissipation (Max)
230W
Peak Repetitive Reverse Voltage
1200V
Working Peak Reverse Voltage
1200V
Average Rectified Forward Current
40A
Non-repetitive Peak Surge Current
480A
Reverse Leakage Current
200uA
Application 1
Switching Power Supply
Application 2
Solar Inverter